Excimer Laser‐induced Etching of Semiconductors and Metals
J.‐L. Peyre
(Laboratoires de Marcoussis, Marcoussis, France)
D. Rivière
(Laboratoires de Marcoussis, Marcoussis, France)
C. Vannier
(Laboratoires de Marcoussis, Marcoussis, France)
G. Villela
(Laboratoires de Marcoussis, Marcoussis, France)
63
Abstract
As the feature sizes of microelectronic and optoelectronic components continue to decrease, there has been increased interest in developing new techniques for etching the materials used to construct these highly integrated components. Features of the new techniques now being investigated include etching with neutral species, maskless processing, material selectivity, and reduced electrical damage.
Citation
Peyre, J.‐., Rivière, D., Vannier, C. and Villela, G. (1990), "Excimer Laser‐induced Etching of Semiconductors and Metals", Microelectronics International, Vol. 7 No. 1, pp. 6-9. https://doi.org/10.1108/eb044393
Publisher
:MCB UP Ltd
Copyright © 1990, MCB UP Limited