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Experience with AlN Substrate

M. Feil (Fraunhofer‐Institut für Festkörpertechnologie, Munich, W. Germany)

Microelectronics International

ISSN: 1356-5362

Article publication date: 1 January 1989

61

Abstract

The similarity of its temperature expansion coefficient to that of silicon, as well as its high thermal conductivity, makes AlN a material suited for application in microelectronics. A comparison of the various AlN manufacturers shows above all differences in the choice of sintering aids and the type of sintering process. A comparison of a standard paste system (Du Pont) with a new special development (Shoei) demonstrates the need for adapting the pastes to AlN ceramics. Thin film technology is possible at a standard similar to that of Al2O3.

Citation

Feil, M. (1989), "Experience with AlN Substrate", Microelectronics International, Vol. 6 No. 1, pp. 29-34. https://doi.org/10.1108/eb044355

Publisher

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MCB UP Ltd

Copyright © 1989, MCB UP Limited

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