Analysis and Synthesis of Thick Film Resistors Using EGET Principles

Abstract

A new model for thick film resistor calculation accounts for the physical effects which make variations in local sheet resistivity and local volume resistivity: geometry and terminal diffusion effects. Taking the criterion of homogeneity in the observations of local resistivity, a resistor is transformed geometrically and electrically into equivalent modular parts. Comparing the resistor transformed by equivalent geometrical and electrical transformation (EGET) with an ideal resistor a new semi‐empirical formula for thick film resistor calculation was evaluated. This model takes into account the technological process which makes possible more accurate resistor projection compared with other models.

Citation

Aleksić, O.S., Nikolić, P.M. and Todorović, D.M. (1988), "Analysis and Synthesis of Thick Film Resistors Using EGET Principles", Microelectronics International, Vol. 5 No. 3, pp. 20-23. https://doi.org/10.1108/eb044337