New Package Cooling Technology Using Low Melting Point Alloys
Article publication date: 1 March 1987
This paper describes one of the new package cooling technology concepts using low melting point alloys in order to perform high density packaging. Two kinds of cooling alloy materials, Bi/Sn/In and Bi/Pb/Sn/ln, whose melting points were less than 80°C and whose costs were low, were selected. The experimental substrate sample was fabricated by greensheet technology on which a tungsten metallised resistor heater was formed. Two kovar weld rings were brazed together to the top side and back side surfaces of the substrate individually. One kovar metal shell was laser welded to the top side weld ring in order to protect many devices. Another kovar metal shell, with a hole in the centre, was laser welded to the back side weld ring. The low melting point alloy was melted and poured into the back side kovar shell through the hole in a liquid state. After it was cooled and changed into a solid state, the hole was sealed hermetically with a small kovar metal cap by a laser beam. The authors performed a thermal experiment and confirmed that the substrate back surface temperature was fixed at the cooling alloy material's melting point for several minutes by thermal absorption while the low melting point alloy phase changed from its original solid state into a liquid state. This new package cooling technology is extremely useful for a high power motor drive circuit package which consists of many high power transistor chips and other analogue IC chips, and whose motor drive operation is performed intermittently for several minutes with some interval times.
Fukuoka, Y., Matsumoto, E. and Ishizuka, M. (1987), "New Package Cooling Technology Using Low Melting Point Alloys", Microelectronics International, Vol. 4 No. 3, pp. 13-18. https://doi.org/10.1108/eb044286
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