To read this content please select one of the options below:

Piezoresistive Properties of Thick‐film Resistors An Overview

M. Prudenziati (Department of Physics, University of Modena, Modena, Italy)
B. Morten (Department of Physics, University of Modena, Modena, Italy)

Microelectronics International

ISSN: 1356-5362

Article publication date: 1 February 1986

145

Abstract

The paper gives a review of the present knowledge of the piezoresistive properties of thick‐film resistors (TFRs) and shows how they have been exploited for the implementation of strain‐related physical‐quantities transducers. Two types of device are described in some detail. These achievements were made possible by a proper choice of resistive and conductive pastes and their firing conditions, since only in this case useful piezoresistive properties can be achieved that make TFR strain gauges competitive with metal and semiconductive materials. After examining some correlations between gauge factors, composition and structure of TFRs, new data are presented showing how the strain sensitivities may be changed by varying the peak firing temperature, dwell time and the nature of the chemical elements which diffuse from terminations in the films.

Citation

Prudenziati, M. and Morten, B. (1986), "Piezoresistive Properties of Thick‐film Resistors An Overview", Microelectronics International, Vol. 3 No. 2, pp. 20-37. https://doi.org/10.1108/eb044226

Publisher

:

MCB UP Ltd

Copyright © 1986, MCB UP Limited

Related articles