The Fundamentals of Thin Film Resistive Technology for the Production of Ultra‐stable Resistors and Networks

Abstract

The paper describes the physical phenomena which influence the electrical and mechanical characteristics of low temperature coefficient, high stability thin metal resistive films. Emphasis is placed on the Matthiensen and Arrhenius rules in respect of resistivity and time‐temperature stabilities. The phenomena outlined are highly dependent on the deposition methods used and film properties are discusssed in terms of the film formation kinetics, substrates, and deposition technologies. The production of thin metal film resistive films based on these principles readily achieves temperature coefficients of <5 ppm/°C over the temperature range −55°C to + 155°C with load stress stabilities of <300 ppm with full dissipation, 155°C, 2000 hours, which is as good as bulk nickel‐chromium alloy foil.

Citation

Simon, P.R. (1985), "The Fundamentals of Thin Film Resistive Technology for the Production of Ultra‐stable Resistors and Networks", Microelectronics International, Vol. 2 No. 3, pp. 36-39. https://doi.org/10.1108/eb044184