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Ruthenium Contacts Resist Chemical Attack in Communications Use

R.D. Lanam (Engelhard Corporation, Specialty Metals Division, Carteret, New Jersey, USA)
A.R. Robertson (Engelhard Corporation, Specialty Metals Division, Carteret, New Jersey, USA)

Microelectronics International

ISSN: 1356-5362

Article publication date: 1 March 1985

20

Abstract

In general, sputtered ruthenium films attain platinum‐group properties that make them candidates for various uses in electrical, thermal and decorative areas. Advanced communications devices are one of these areas. Ruthenium could possibly be used as a diffusion barrier and adhesive layer, as a suicide former for low ohmic contacts, and as a final metallisation over platinum suicide for very large scale integration (VLSI) applications.

Citation

Lanam, R.D. and Robertson, A.R. (1985), "Ruthenium Contacts Resist Chemical Attack in Communications Use", Microelectronics International, Vol. 2 No. 3, pp. 23-25. https://doi.org/10.1108/eb044182

Publisher

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MCB UP Ltd

Copyright © 1985, MCB UP Limited

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