The Influence of Microcracks on the Temperature Dependence of Resistance in Ruthenium Based Thick Film Resistors

Abstract

This paper presents a computer model which describes the influence of microcracks on the temperature dependence of resistance in thick film resistors. The tunnelling barrier model for a single particle‐barrier‐particle ‘unit cell’, proposed by Seager and Pike, is assumed. The model presented is based on an analysis of the critical percolation path that forms in the sample. It is shown that the growth in density of the microcracks induces a shift of the minimum resistance to higher temperatures, and that the value of this minimum decreases. The theoretical temperature dependences of resistance are compared with experimental data, obtained in the temperature range 295K–425K, for thick film resistors made using Du Pont 1421 and 1431 Birox resistor pastes.

Citation

Kozlowski, J.M. (1984), "The Influence of Microcracks on the Temperature Dependence of Resistance in Ruthenium Based Thick Film Resistors", Microelectronics International, Vol. 1 No. 4, pp. 10-14. https://doi.org/10.1108/eb044138