TY  - JOUR
AB  - The insulated gate bipolar transistor (IGBT) is an increasingly used power transistor which has the advantage over the more conventional DMOS structure of achieving a lower on‐resistance through the high‐injection of electrons and holes into the drift region thereby causing conductivity modulation and a lowering of the electrical resistance.
VL  - 2
IS  - 4
SN  - 0961-5539
DO  - 10.1108/eb017496
UR  - https://doi.org/10.1108/eb017496
AU  - BOARD K.
AU  - MAWBY P.A.
PY  - 1992
Y1  - 1992/01/01
TI  - HEAT SOURCES AND TEMPERATURE DISTRIBUTION IN INSULATED GATE BIPOLAR TRANSISTORS
T2  - International Journal of Numerical Methods for Heat & Fluid Flow
PB  - MCB UP Ltd
SP  - 291
EP  - 298
Y2  - 2024/04/18
ER  -