HEAT SOURCES AND TEMPERATURE DISTRIBUTION IN INSULATED GATE BIPOLAR TRANSISTORS

Abstract

The insulated gate bipolar transistor (IGBT) is an increasingly used power transistor which has the advantage over the more conventional DMOS structure of achieving a lower on‐resistance through the high‐injection of electrons and holes into the drift region thereby causing conductivity modulation and a lowering of the electrical resistance.

Citation

BOARD, K. and MAWBY, P.A. (1992), "HEAT SOURCES AND TEMPERATURE DISTRIBUTION IN INSULATED GATE BIPOLAR TRANSISTORS", International Journal of Numerical Methods for Heat & Fluid Flow, Vol. 2 No. 4, pp. 291-298. https://doi.org/10.1108/eb017496