The insulated gate bipolar transistor (IGBT) is an increasingly used power transistor which has the advantage over the more conventional DMOS structure of achieving a lower on‐resistance through the high‐injection of electrons and holes into the drift region thereby causing conductivity modulation and a lowering of the electrical resistance.
BOARD, K. and MAWBY, P.A. (1992), "HEAT SOURCES AND TEMPERATURE DISTRIBUTION IN INSULATED GATE BIPOLAR TRANSISTORS", International Journal of Numerical Methods for Heat & Fluid Flow, Vol. 2 No. 4, pp. 291-298. https://doi.org/10.1108/eb017496Download as .RIS
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