An energy‐momentum transport model for sub‐micron silicon devices is modified to include new sets of simple interband scattering models representing impact ionization, auger recombination, trapping and photo generation. These have been developed using a simplified physical modelling approach. A discretization scheme suitable for application to an irregular spatial grid is presented. The resulting model is suitable for the study of small geometry effects in silicon devices.
ROBERTS, J.W. and CHAMBERLAIN, S.G. (1990), "ENERGY‐MOMENTUM TRANSPORT MODEL SUITABLE FOR SMALL GEOMETRY SILICON DEVICE SIMULATION", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 9 No. 1, pp. 1-22. https://doi.org/10.1108/eb010322Download as .RIS
MCB UP Ltd
Copyright © 1990, MCB UP Limited