To read this content please select one of the options below:

A SPLITTING SCHEME FOR A DRIFT‐DIFFUSION MODEL OF SEMICONDUCTORS

Yu.A. BEREZIN (Institute of Theoretical and Applied Mechanics, Novosibirsk, USSR)
O.E. DMITRIEVA (Institute of Theoretical and Applied Mechanics, Novosibirsk, USSR)

Abstract

In this paper, the authors describe a more efficient and economical method for a splitting scheme for drift‐diffusion models for semiconductors. It enables one to calculate stationary and non‐stationary processes in semiconductor plasma.

Citation

BEREZIN, Y.A. and DMITRIEVA, O.E. (1988), "A SPLITTING SCHEME FOR A DRIFT‐DIFFUSION MODEL OF SEMICONDUCTORS", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 7 No. 4, pp. 227-232. https://doi.org/10.1108/eb010320

Publisher

:

MCB UP Ltd

Copyright © 1988, MCB UP Limited

Related articles