To read this content please select one of the options below:

ONE‐DIMENSIONAL MODELLING OF DIFFUSION IN SEMICONDUCTORS DURING CRYSTAL GROWTH

M.T. HEARNE (Departments of Theoretical Mechanics and Electrical and Electronic Engineering, University of Nottingham, U.K.)
T.G. ROGERS (Departments of Theoretical Mechanics and Electrical and Electronic Engineering, University of Nottingham, U.K.)
B. TUCK (Departments of Theoretical Mechanics and Electrical and Electronic Engineering, University of Nottingham, U.K.)

Abstract

A simple approach is developed for modelling the distribution of dopant in crystals grown by the Czochralski technique. Allowance is made for the temperature dependence of the diffusivity and for the diffusion of dopant behind the moving boundary. It is found that the effect can make a significant difference to the final dopant distribution. The diffusion process is modelled using a discrete method, previously developed for situations in which the boundary is static.

Citation

HEARNE, M.T., ROGERS, T.G. and TUCK, B. (1987), "ONE‐DIMENSIONAL MODELLING OF DIFFUSION IN SEMICONDUCTORS DURING CRYSTAL GROWTH", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 6 No. 4, pp. 211-225. https://doi.org/10.1108/eb010313

Publisher

:

MCB UP Ltd

Copyright © 1987, MCB UP Limited

Related articles