ONE‐DIMENSIONAL MODELLING OF DIFFUSION IN SEMICONDUCTORS DURING CRYSTAL GROWTH
ISSN: 0332-1649
Article publication date: 1 April 1987
Abstract
A simple approach is developed for modelling the distribution of dopant in crystals grown by the Czochralski technique. Allowance is made for the temperature dependence of the diffusivity and for the diffusion of dopant behind the moving boundary. It is found that the effect can make a significant difference to the final dopant distribution. The diffusion process is modelled using a discrete method, previously developed for situations in which the boundary is static.
Citation
HEARNE, M.T., ROGERS, T.G. and TUCK, B. (1987), "ONE‐DIMENSIONAL MODELLING OF DIFFUSION IN SEMICONDUCTORS DURING CRYSTAL GROWTH", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 6 No. 4, pp. 211-225. https://doi.org/10.1108/eb010313
Publisher
:MCB UP Ltd
Copyright © 1987, MCB UP Limited