TY  - JOUR
AB  - A new method for statistical process/device modeling has been developed and applied to determine the impurty profiles and the current‐voltage characteristics of the p‐n junction. This method combines accurate numerical solutions of the transport equations with internally calibrated fast analytical (semi‐empirical) models.
VL  - 11
IS  - 4
SN  - 0332-1649
DO  - 10.1108/eb010115
UR  - https://doi.org/10.1108/eb010115
AU  - Pfitzner Andrzej
AU  - Grygolec Miroslaw
PY  - 1992
Y1  - 1992/01/01
TI  - Fast models for statistical process/device simulation
T2  - COMPEL - The international journal for computation and mathematics in electrical and electronic engineering
PB  - MCB UP Ltd
SP  - 545
EP  - 548
Y2  - 2024/04/23
ER  -