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EFFECTS OF LATTICE TEMPERATURE IN MOSFET ANALYSIS UNDER NON‐ISOTHERMAL CONDITIONS

Hirokazu Hayashi (College of engineering, Hosei University, Tokyo 184, Japan)
Ryo Dang (College of engineering, Hosei University, Tokyo 184, Japan)

Abstract

Effects of lattice temperature on MOSFET characteristics and a rough distribution of carrier temperature, are studied using a non‐isothermal device simulator which also includes the effect of temperature gradient on the current density. To clarify the mechanism of the increase in lattice temperature, the source of heat generation is investigated. We have confirmed that the increase in lattice temperature results mainly from the generation of Joule heat, representing the product of the electric field and the electron current density. We also found that, as the gate length becomes short, the lattice temperature rises exponentially. In addition, it is found that the lattice temperature shows a localized increase of 77 degrees under normal biasing conditions in the MOSFET with a gate length of 0.5[ μ m].

Citation

Hayashi, H. and Dang, R. (1992), "EFFECTS OF LATTICE TEMPERATURE IN MOSFET ANALYSIS UNDER NON‐ISOTHERMAL CONDITIONS", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 11 No. 4, pp. 489-503. https://doi.org/10.1108/eb010109

Publisher

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MCB UP Ltd

Copyright © 1992, MCB UP Limited