To read the full version of this content please select one of the options below:

MOPIT: OPEN SYSTEM FOR DEVICE AND TECHNOLOGY SIMULATION

A.L. Alexsandrov (Institute of Theoretical and Applied Mechanics, Siberian Branch RAS, Novosibirsk 630090 Russia)
P.A. Androsenko (Institute of Physics and Power Engineering, Obninsk, Russia)
V.M. Bedanov (Institute of Theoretical and Applied Mechanics, Siberian Branch RAS, Novosibirsk 630090 Russia)
A.M. Bekesheva (Institute of Semiconductor Physics, Siberian Branch RAS, Novosibirsk 630090 Russia)
E.E. Dagnan (Institute of Semiconductor Physics, Siberian Branch RAS, Novosibirsk 630090 Russia)
O.E. Dnitrieva (Institute of Theoretical and Applied Mechanics, Siberian Branch RAS, Novosibirsk 630090 Russia)
G.V. Gadiyak (Institute of Theoretical and Applied Mechanics, Siberian Branch RAS, Novosibirsk 630090 Russia)
V.P. Ginkin (Institute of Physics and Power Engineering, Obninsk, Russia)
M.S. Ivanov (Institute of Theoretical and Applied Mechanics, Siberian Branch RAS, Novosibirsk 630090 Russia)
Zh.L. Korobitsina (Institute of Theoretical and Applied Mechanics, Siberian Branch RAS, Novosibirsk 630090 Russia)
T.M. Lukhanova (Institute of Physics and Power Engineering, Obninsk, Russia)
M.S. Obrekht (Institute of Theoretical and Applied Mechanics, Siberian Branch RAS, Novosibirsk 630090 Russia)
A.A. Shinanskiy (Institute of Physics and Power Engineering, Obninsk, Russia)
V.A. Schveigert (Institute of Theoretical and Applied Mechanics, Siberian Branch RAS, Novosibirsk 630090 Russia)
I.V. Schveigert (Institute of Theoretical and Applied Mechanics, Siberian Branch RAS, Novosibirsk 630090 Russia)
E.G. Tishkovsky (Institute of Semiconductor Physics, Siberian Branch RAS, Novosibirsk 630090 Russia)
Yu.P. Zhydkov (Institute of Atomic Energy Moscow, Russia)

Abstract

In this paper the MOPIT system for the simulation of devices and manufacturing processes is presented. The MOPIT system is meant for the simulation of the following semiconductor processing : ion implantation of impurities , diffusion , radiation enhanced diffusion , thermal oxidation of silicon , molecular‐beam epitaxy, plasma‐chemical etching and deposition, cross‐sectional profile evolution of trench in plasma‐etching and deposition; as well as the following devices: MOS‐structures , high‐voltage diode, element of memory, charge accumulation in a sub‐gate dielectric.

Citation

Alexsandrov, A.L., Androsenko, P.A., Bedanov, V.M., Bekesheva, A.M., Dagnan, E.E., Dnitrieva, O.E., Gadiyak, G.V., Ginkin, V.P., Ivanov, M.S., Korobitsina, Z.L., Lukhanova, T.M., Obrekht, M.S., Shinanskiy, A.A., Schveigert, V.A., Schveigert, I.V., Tishkovsky, E.G. and Zhydkov, Y.P. (1992), "MOPIT: OPEN SYSTEM FOR DEVICE AND TECHNOLOGY SIMULATION", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 11 No. 4, pp. 445-455. https://doi.org/10.1108/eb010105

Publisher

:

MCB UP Ltd

Copyright © 1992, MCB UP Limited