TY  - JOUR
AB  - Computer code complex for the thermal oxidation of silicon is presented. There are one‐dimensional model and two‐ dimensional models:the model of viscoelastic oxide and the hydrodynamical models — an ideal fluid and a viscous fluid models. If nitride mask is absent, a one‐dimensional model is used.The influence of an induced stress on the diffusion and reaction is taken into account.
VL  - 11
IS  - 4
SN  - 0332-1649
DO  - 10.1108/eb010103
UR  - https://doi.org/10.1108/eb010103
AU  - Gadiyak G.V.
AU  - Korobitsina J.L.
AU  - Kranarenko V.I.
PY  - 1992
Y1  - 1992/01/01
TI  - NUMERICAL SIMULATION OF THE THERMAL OXIDATION OF SILICON
T2  - COMPEL - The international journal for computation and mathematics in electrical and electronic engineering
PB  - MCB UP Ltd
SP  - 419
EP  - 431
Y2  - 2024/04/16
ER  -