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NUMERICAL SIMULATION OF THE THERMAL OXIDATION OF SILICON

G.V. Gadiyak (Institute of Theoretical and Applied Mechanics Siberian Branch of Russian Academy of Sciences Novosibirsk 630090, Institutskaya, 4/1)
J.L. Korobitsina (Institute of Computational Technologies Siberian Branch of Russian Academy of Sciences Novosibirsk 630090 pr. Ak.Lavrentieva, 6)
V.I. Kranarenko (Institute of Electrical Communications Novosibirsk 630125, Kirova, 86)

Abstract

Computer code complex for the thermal oxidation of silicon is presented. There are one‐dimensional model and two‐ dimensional models:the model of viscoelastic oxide and the hydrodynamical models — an ideal fluid and a viscous fluid models. If nitride mask is absent, a one‐dimensional model is used.The influence of an induced stress on the diffusion and reaction is taken into account.

Citation

Gadiyak, G.V., Korobitsina, J.L. and Kranarenko, V.I. (1992), "NUMERICAL SIMULATION OF THE THERMAL OXIDATION OF SILICON", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 11 No. 4, pp. 419-431. https://doi.org/10.1108/eb010103

Publisher

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MCB UP Ltd

Copyright © 1992, MCB UP Limited