The effect of a screening oxide layer on 1‐D and 2‐D ion implantation profiles in silicon is investigated using Monte Carlo simulations. Experimental observations of profile broadening by oxide layers are explained by the fact that atoms at lattice positions are less effective in steering ions into channels than atoms at random positions. The influence of the oxide layer on the lateral penetration below a mask is discussed in terms of implantation energy and ion species. A new set of parameters for the electronic stopping of phosphorus and arsenic in silicon is used.
Hobler, G. and Pötzl, H. (1992), "THE EFFECT OF A SCREENING OXIDE ON ION IMPLANTATION STUDIED BY MONTE CARLO SIMULATIONS", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 11 No. 4, pp. 403-411. https://doi.org/10.1108/eb010101Download as .RIS
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