TY  - JOUR
AB  - This paper describes a modeling strategy and the model development for predicting ion implanted impurity distributions in single‐crystal silicon. Both a computationally efficient semi‐empirical model and a physically‐based, more computationally intense Monte Carlo model have been developed for boron distributions in silicon. The resulting models account very well for the detailed profile dependence on implant dose, tilt angle, and rotation angle in addition to energy.
VL  - 11
IS  - 4
SN  - 0332-1649
DO  - 10.1108/eb010100
UR  - https://doi.org/10.1108/eb010100
AU  - Tasch Al F.
PY  - 1992
Y1  - 1992/01/01
TI  - ACCURATE AND COMPUTATIONALLY EFFICIENT MODELING OF ION IMPLANTATION IN SINGLE‐CRYSTAL SILICON
T2  - COMPEL - The international journal for computation and mathematics in electrical and electronic engineering
PB  - MCB UP Ltd
SP  - 391
EP  - 402
Y2  - 2024/04/24
ER  -