TY  - JOUR
AB  - An efficient numerical method for the solution of hot‐carrier transport equations describing transient processes in submicrometer semiconductor devices is proposed. The calculations of transient processes in submicrometer MOS transistor were carried out and compared with the results obtained by conventional drift‐diffusion model.
VL  - 11
IS  - 2
SN  - 0332-1649
DO  - 10.1108/eb010094
UR  - https://doi.org/10.1108/eb010094
AU  - LYUMKIS E.D.
AU  - POLSKY B.S.
AU  - SHUR A.I.
AU  - VISOCKY P.
PY  - 1992
Y1  - 1992/01/01
TI  - TRANSIENT SEMICONDUCTOR DEVICE SIMULATION INCLUDING ENERGY BALANCE EQUATION
T2  - COMPEL - The international journal for computation and mathematics in electrical and electronic engineering
PB  - MCB UP Ltd
SP  - 311
EP  - 325
Y2  - 2024/09/19
ER  -