A one‐dimensional finite difference scheme adapted to high order moment equation models arising in the approximate description of semiconducting submicron structures is presented. The new scheme is a natural extension of the Scharfetter‐Gummel scheme used in drift‐diffusion models. Through local analytic solutions an accurate representation of exponentially varying solution components is realised.
GEURTS, B. (1991), "AN EXTENDED SCHARFETTER‐GUMMEL SCHEME FOR HIGH ORDER MOMENT EQUATIONS", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 10 No. 3, pp. 179-194. https://doi.org/10.1108/eb010089Download as .RIS
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