TY  - JOUR
AB  - A half‐implicit absolutely stable method for 3D simulation of the transient processes in semiconductor devices is proposed. The calculations of transient processes in bipolar transistor were carried out and were compared with the results of 2D simulation.
VL  - 10
IS  - 3
SN  - 0332-1649
DO  - 10.1108/eb010086
UR  - https://doi.org/10.1108/eb010086
AU  - ADAMSONE A.I.
AU  - POLSKY B.S.
PY  - 1991
Y1  - 1991/01/01
TI  - 3D NUMERICAL SIMULATION OF TRANSIENT PROCESSES IN SEMICONDUCTOR DEVICES
T2  - COMPEL - The international journal for computation and mathematics in electrical and electronic engineering
PB  - MCB UP Ltd
SP  - 129
EP  - 139
Y2  - 2024/04/19
ER  -