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3D NUMERICAL SIMULATION OF TRANSIENT PROCESSES IN SEMICONDUCTOR DEVICES

A.I. ADAMSONE (Computing Centre, Latvian State University, 29 Rainis Boulevard, Riga, U.S.S.R.)
B.S. POLSKY (Computing Centre, Latvian State University, 29 Rainis Boulevard, Riga, U.S.S.R.)

Abstract

A half‐implicit absolutely stable method for 3D simulation of the transient processes in semiconductor devices is proposed. The calculations of transient processes in bipolar transistor were carried out and were compared with the results of 2D simulation.

Citation

ADAMSONE, A.I. and POLSKY, B.S. (1991), "3D NUMERICAL SIMULATION OF TRANSIENT PROCESSES IN SEMICONDUCTOR DEVICES", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 10 No. 3, pp. 129-139. https://doi.org/10.1108/eb010086

Publisher

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MCB UP Ltd

Copyright © 1991, MCB UP Limited