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AN EFFICIENT DIFFUSION ALGORITHM FOR 2‐D VLSI PROCESS MODELING CODE

E.N. STEFANOV (Department of Process & Device Modeling, Institute of Microelectronics, Boul. Lenin 7th km. 1784‐Sofia, Bulgaria)
A.M. ASENOV (Department of Process & Device Modeling, Institute of Microelectronics, Boul. Lenin 7th km. 1784‐Sofia, Bulgaria)

Abstract

The coupled set of non‐linear 2D diffusion equations for donor and acceptor type impurities with initial and appropriated boundary conditions is solved by an implicit locally‐one dimensional finite difference method. Numerical experiments have been made to achieve a reasonable trade‐off between the desired accuracy and the CPU time. The algorithm was implemented to the process module of the 2‐D integrated process and device modeling system IMPEDANCE 2.0.

Citation

STEFANOV, E.N. and ASENOV, A.M. (1990), "AN EFFICIENT DIFFUSION ALGORITHM FOR 2‐D VLSI PROCESS MODELING CODE", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 9 No. 4, pp. 229-245. https://doi.org/10.1108/eb010078

Publisher

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MCB UP Ltd

Copyright © 1990, MCB UP Limited

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