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NUMERICAL SOLUTION OF THE HYDRODYNAMIC MODEL FOR A ONE‐DIMENSIONAL SEMICONDUCTOR DEVICE

M. RUDAN (IBM Corporation, T.J. Watson Research Center, P.O. Box 218, Yorktown Heights 10598 N.Y., U.S.A. The permanent address of M. Rudan is: Dipartimento di Elettronica, Informatica e Sistemistica (DEIS), Facoltà di Ingegneria, Università di Bologna, viale Risorgimento 2, 40136 Bologna, Italy.)
F. ODEH (IBM Corporation, T.J. Watson Research Center, P.O. Box 218, Yorktown Heights 10598 N.Y., U.S.A.)
J. WHITE (IBM Corporation, T.J. Watson Research Center, P.O. Box 218, Yorktown Heights 10598 N.Y., U.S.A.)

Abstract

A numerical implementation of a discretization scheme of the hydrodynamic model for submicron devices is described and applied to a one‐dimensional ballistic diode. The performance of the numerical method and the physical results of the simulation for different biases and lattice temperatures, and a brief comparison to Monte Carlo simulations, are also given.

Citation

RUDAN, M., ODEH, F. and WHITE, J. (1987), "NUMERICAL SOLUTION OF THE HYDRODYNAMIC MODEL FOR A ONE‐DIMENSIONAL SEMICONDUCTOR DEVICE", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 6 No. 3, pp. 151-170. https://doi.org/10.1108/eb010032

Publisher

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MCB UP Ltd

Copyright © 1987, MCB UP Limited

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