60-volt P-channel radiation hardened MOSFET

Aircraft Engineering and Aerospace Technology

ISSN: 0002-2667

Publication date: 1 April 2000

Keywords

Citation

(2000), "60-volt P-channel radiation hardened MOSFET", Aircraft Engineering and Aerospace Technology, Vol. 72 No. 2. https://doi.org/10.1108/aeat.2000.12772bad.002

Publisher

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Emerald Group Publishing Limited

Copyright © 2000, MCB UP Limited


60-volt P-channel radiation hardened MOSFET

60-volt P-channel radiation hardened MOSFET

Keywords: Intersil, Transistors, Radiation resistant

Intersil Corp. announces the latest addition to its family of next-generation radiation hardened (Rad Hard) MOSFETS that protect against Single Effect Effects (SEE) in satellite and aerospace applications. The new 60-volt (V) P-channel MOSFET respectively delivers power conditioning and control in satellite applications and, at typical 16 miliohms (mohm), claims the lowest rDS(ON) in the industry.

According to Intersil it is also the only industry MOSFET with guaranteed SEE capability with safe operating area (SOA) curves. The device is suited for applications exposed to radiation environments, such as switching regulation, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power.

Intersil's FST9055 P-channel, 60V, size five, Rad Hard MOSFET has been designed to act as a switch to either control or supply power to an entire system or to a single object such as a solenoid or motor. Delivering an rDS(ON) of 16mohm, the device reduces heat sink requirements and improves system losses. The result is less weight, cost and size for the entire system. Jerry Kim, product manager at Intersil, said:

The entire Rad Hard family includes a range of voltages that results in a greater number of breakdown voltage options for the designer. Many satellite bus systems designers utilise 500V devices. Intersil provides designers with the opportunity to employ a range of lower voltage FETs that dramatically reduce the rDS(ON) of the FET switch. In this case, Intersil's FST9055 represents a 60V alternative. The direct result is a reduction in system loss leading to lower system costs or higher performance and efficiency.

The MOSFET is an enhancement-mode silicon-gate power field effect transistor with a vertical double-diffused metal-oxide semiconductor (DMOS) structure.

Intersil's FST9055 is immediately available in a TO254 package, part number FSTJ9055 and an SMD 2 package, part number FSTYC9055. Both parts are JANS qualified. (FSTJ9055 - JANSR2N7445Tl - MIL-PRF-19500/665), (FSTYC9055 -JANSR2N7462UI - MIL-PRF-19500/668).

Details available from Intersil Literature Service, Tel: +44 (0) 1344 350250; Fax: +44 (0) 01344 488045; E-mail: Intersilinfo@mktpoint.com; WWW: www.intersil.com