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Performance of gas nanosensor in 1-4 per cent hydrogen concentration

Ghobad Behzadi Pour (Department of Physics, East Tehran Branch, Islamic Azad University, Tehran, Iran)
Leila Fekri Aval (Department of Physics, East Tehran Branch, Islamic Azad University, Tehran, Iran)
Parisa Esmaili (Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, Tehran, Iran)

Sensor Review

ISSN: 0260-2288

Article publication date: 26 July 2019

Issue publication date: 26 July 2019

Abstract

Purpose

This study aims to investigate the fabrication of hydrogen gas sensor based on metal–oxide–semiconductor (MOS) microstructure. The palladium nanoparticles (PdNPs) as gate metal have been deposited on the oxide film using spin coating.

Design/methodology/approach

The PdNPs and the surface of oxide film were analyzed using Transmission electron microscopy. The capacitance-voltage (C-V) curves for the MOS sensor in 1, 2 and 4 per cent hydrogen concentration and in 100 KHz frequency at the room temperature were reported.

Findings

The response times for 1, 2 and 4 per cent hydrogen concentration were 2.5 s, 1.5 s and 1 s, respectively. The responses (R per cent) of MOS sensor to 1, 2 and 4 per cent hydrogen concentration were 42.8, 47.3 and 52.6 per cent, respectively.

Originality/value

The experimental results demonstrate that the MOS hydrogen gas sensor based on the PdNPs gate, shows the fast response and recovery compared to other hydrogen gas sensors based on the Pd.

Keywords

Acknowledgements

This research work was supported by the Department of Physics, East Tehran Branch, Islamic Azad University, Tehran, Iran.

Citation

Behzadi Pour, G., Fekri Aval, L. and Esmaili, P. (2019), "Performance of gas nanosensor in 1-4 per cent hydrogen concentration", Sensor Review, Vol. 39 No. 4, pp. 622-628. https://doi.org/10.1108/SR-06-2018-0155

Publisher

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Emerald Publishing Limited

Copyright © 2019, Emerald Publishing Limited