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Modeling of current-voltage characteristic of the intergranular barrier in metal oxide varistor ceramics

Alexander S. Tonkoshkur (Department of Physics, Electronics and Computer Systems, Oles Honchar Dnipropetrovsk National University, Dnipropetrovsk, Ukraine)
Alexander V. Ivanchenko (Department of Physics, Electronics and Computer Systems, Oles Honchar Dnipropetrovsk National University, Dnipropetrovsk, Ukraine)

Multidiscipline Modeling in Materials and Structures

ISSN: 1573-6105

Article publication date: 7 October 2014

130

Abstract

Purpose

The purpose of this paper is to develop a generalized model of the nonlinear conductivity of varistor ceramic suitable for solving problems of prediction and control of ceramic nonlinearity, stability of varistor properties.

Design/methodology/approach

The modeling of current-voltage characteristic of the intergranular barrier in metal oxide varistor ceramics is based on the development of the algorithm. It includes all the known mechanisms of electrotransfer in a wide range of voltages and currents of the current-voltage characteristics, and also takes into account the deviation of the barrier form the Schottky barrier.

Findings

The models of double Schottky barrier and double barrier of arbitrary form, as well as the algorithms for calculating the current-voltage characteristics of a single intergranular potential barrier and a separate “microvaristor” with the use of the most well-established understanding of the main mechanisms of electrical are developed. The results of current-voltage characteristics modeling correspond to the existing understanding of the nonlinear electrical conductivity varistor ceramics are based on zinc oxide. The model of double barrier of arbitrary form takes into account the deviation of the barrier form the Schottky barrier which is important in predicting the deformation of the current-voltage characteristics of the varistor products in the process of degradation.

Originality/value

The relation between the form of the current-voltage characteristic and the distribution profile of the donor concentration in the surface regions of the semiconductor crystallites constituting the intergranular potential barrier is established. The accumulation of donors in the space charge region leads to the increase in the current on the prebreakdown region of the current-voltage characteristic and the reduction of voltage corresponding to the breakdown region beginning of the current-voltage characteristic. The significant role of the interlayer in the formation of current-voltage characteristic of the intergranular potential barrier is shown.

Keywords

Citation

S. Tonkoshkur, A. and V. Ivanchenko, A. (2014), "Modeling of current-voltage characteristic of the intergranular barrier in metal oxide varistor ceramics", Multidiscipline Modeling in Materials and Structures, Vol. 10 No. 3, pp. 362-378. https://doi.org/10.1108/MMMS-11-2013-0066

Publisher

:

Emerald Group Publishing Limited

Copyright © 2014, Emerald Group Publishing Limited

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