The purpose of this paper is to analyze and optimize the formation of field-effect heterotransistors using analytical approach. The approach makes it possible to analyze mass and heat transport in a multilayer structure without cross-linking of solutions on interfaces between layers of the multilayer structure. The optimization makes it possible to decrease dimensions of the heterotransistors and to increase speed of transport of charge carriers during functioning of the transistors.
The authors introduce an analytical approach for analysis of mass and heat transport, which makes it possible to take into account at one time varying in space and time parameters of the transports (diffusion coefficient, heat conduction coefficient, etc.) and nonlinearity of processes. The approach enables analysis of mass and heat transport in a multilayer structure without cross-linking of solutions on interfaces between layers of the multilayer structure and optimises the technological process. The optimization means it is possible to decrease dimensions of field-effect heterotransistors.
In this paper the authors introduce an approach to manufacture a field-effect heterotransistor with inhomogeneous doping of channel. Some recommendations to optimize technological process to manufacture more compact distribution of concentration of dopant have been formulated.
The results are original and the paper provides an approach to the manufacture of a field-effect heterotransistor.
This work is supported by the agreement dated August 27, 2013 No. 02.В.49.21.0003 between The Ministry of Education and Science of the Russian Federation and Lobachevsky State University of Nizhni Novgorod, educational fellowship for scientific research of Government of Russia, educational fellowship for scientific research of Government of Nizhny Novgorod region of Russia and educational fellowship for scientific research of Nizhny Novgorod State University of Architecture and Civil Engineering.
Pankratov, E. and Bulaeva, E. (2016), "An analytical approach for analysis and optimization of formation of field-effect heterotransistors", Multidiscipline Modeling in Materials and Structures, Vol. 12 No. 4, pp. 578-604. https://doi.org/10.1108/MMMS-09-2015-0057Download as .RIS
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