The purpose of this paper is to analytically model redistribution of dopant in a heterostructure during annealing of dopant and/or radiation defects (during the modeling, the authors consider two types of infusing of the dopant: dopant diffusion and ion implantation). The authors consider a heterostructure, which consists of a substrate and an epitaxial layer. After that the authors consider doping of several specific areas to manufacture heterodiodes and heterobipolar transistors framework hybrid cascaded multilevel inverter.
Based on the modeling, the authors introduce an approach to increase density of diodes and bipolar transistors framework hybrid cascaded multilevel inverter, which has been manufactured based on the heterostructure. The approach is based on using inhomogeneity of the heterostructure and optimization of annealing of dopant and/or radiation defects.
The approach gives us possibility to take into account nonlinearity of considered processes.
The authors introduce an analytical approach to model diffusion and ion types of doping with account concurrent changing of parameters in space and time.
This work is supported by the agreement of August 27, 2013 No. 02.49.21.0003 between The Ministry of Education and Science of the Russian Federation and Lobachevsky State University of Nizhni Novgorod.
Pankratov, E.L. and Bulaeva, E.A. (2017), "On increasing of density of transistors in a hybrid cascaded multilevel inverter", Multidiscipline Modeling in Materials and Structures, Vol. 13 No. 4, pp. 664-677. https://doi.org/10.1108/MMMS-05-2017-0041
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