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The effect of negative capacitance in varistor structure on the basis of its models with voltage drop on the intergranular interlayer

Alexander Sergeevich Tonkoshkur (Department of Physics, Electronics and Computer Systems, Oles Honchar Dnipropetrovsk National University, Dnipropetrovsk, Ukraine)
Alexander Vladimirovich Ivanchenko (Department of Physics, Electronics and Computer Systems, Oles Honchar Dnipropetrovsk National University, Dnipropetrovsk, Ukraine)

Multidiscipline Modeling in Materials and Structures

ISSN: 1573-6105

Article publication date: 9 November 2015

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Abstract

Purpose

The purpose of this paper is modeling the effect of negative capacitance in the capacitance-voltage characteristic of the intergranular potential barrier of varistor structure.

Design/methodology/approach

The modeling of the capacitance-voltage characteristic of the intergranular barrier in metal oxide varistor ceramics is based on the development of the algorithm. It includes all the known mechanisms of electrotransfer in a wide range of voltages and currents, and also takes into account the voltage drop on the intergranular interlayer of intergranular potential barrier.

Findings

The models and algorithms for calculating the capacitance-voltage characteristics of a single intergranular potential barrier with the use of the most established understanding used at the interpretation of the nonlinear conductivity intergranular barrier are developed. The results of the capacitance-voltage characteristics modeling correspond to the existing understanding of the electrical properties on the ac current varistor ceramics are based on zinc oxide. The model allows to predict the behavior of varistors on the alternating current (voltage).

Originality/value

It is established that the recharge of the surface localized states occurs when a voltage is applied to the varistor structure, it can lead to a relaxation decrease in the width of the potential barrier overcome by tunneling electrons in the field emission from the conduction band of the one crystallite in the conduction band of the other crystallite and thus to the current backlog of applied voltage on the phase (i.e. the expression of the negative capacitance effect).

Keywords

Citation

Tonkoshkur, A.S. and Ivanchenko, A.V. (2015), "The effect of negative capacitance in varistor structure on the basis of its models with voltage drop on the intergranular interlayer", Multidiscipline Modeling in Materials and Structures, Vol. 11 No. 4, pp. 598-615. https://doi.org/10.1108/MMMS-04-2015-0021

Publisher

:

Emerald Group Publishing Limited

Copyright © 2015, Emerald Group Publishing Limited

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