TY  - JOUR
AB  - Purpose This study aims to explore the applicability of the sol-gel-derived GaN thin films for UV photodetection.Design/methodology/approach GaN-based ultraviolet (UV) photodetector with Pt Schottky contacts was fabricated and its applicability was investigated. The current-voltage (I-V) characteristics of the GaN-based UV photodetector under the dark current and photocurrent were measured.Findings The ideality factors of GaN-based UV photodetector under dark current and photocurrent were 6.93 and 5.62, respectively. While the Schottky barrier heights (SBH) for GaN-based UV photodetector under dark current and photocurrent were 0.35 eV and 0.34 eV, respectively. The contrast ratio and responsivity of this UV photodetector measured at 5 V were found to be 1.36 and 1.68 μA/W, respectively. The photoresponse as a function of time was measured by switching the UV light on and off continuously at different forward biases of 1, 3 and 6 V. The results showed that the fabricated UV photodetector has reasonable stability and repeatability.Originality/value This work demonstrated that GaN-based UV photodetector can be fabricated by using the GaN thin film grown by low-cost and simple sol-gel spin coating method.
VL  - 36
IS  - 1
SN  - 1356-5362
DO  - 10.1108/MI-12-2017-0074
UR  - https://doi.org/10.1108/MI-12-2017-0074
AU  - Fong Chee Yong
AU  - Ng Sha Shiong
AU  - Mohd Amin NurFahana
AU  - Yam Fong Kwong
AU  - Hassan Zainuriah
PY  - 2019
Y1  - 2019/01/01
TI  - Sol-gel-derived gallium nitride thin films for ultraviolet photodetection
T2  - Microelectronics International
PB  - Emerald Publishing Limited
SP  - 8
EP  - 13
Y2  - 2024/04/18
ER  -