This study aims to explore the applicability of the sol-gel-derived GaN thin films for UV photodetection.
GaN-based ultraviolet (UV) photodetector with Pt Schottky contacts was fabricated and its applicability was investigated. The current-voltage (I-V) characteristics of the GaN-based UV photodetector under the dark current and photocurrent were measured.
The ideality factors of GaN-based UV photodetector under dark current and photocurrent were 6.93 and 5.62, respectively. While the Schottky barrier heights (SBH) for GaN-based UV photodetector under dark current and photocurrent were 0.35 eV and 0.34 eV, respectively. The contrast ratio and responsivity of this UV photodetector measured at 5 V were found to be 1.36 and 1.68 μA/W, respectively. The photoresponse as a function of time was measured by switching the UV light on and off continuously at different forward biases of 1, 3 and 6 V. The results showed that the fabricated UV photodetector has reasonable stability and repeatability.
This work demonstrated that GaN-based UV photodetector can be fabricated by using the GaN thin film grown by low-cost and simple sol-gel spin coating method.
The authors would like to thank Ministry of Science, Technology and Innovation (MOSTI) Malaysia for granting Science Fund (Project No.: 03-01-05-SF0750) and the Nippon Sheet Glass Foundation for Materials Science and Engineering, Japan to support this research. The support from Universiti Sains Malaysia is also gratefully acknowledged.
Fong, C., Ng, S., Mohd Amin, N., Yam, F. and Hassan, Z. (2019), "Sol-gel-derived gallium nitride thin films for ultraviolet photodetection", Microelectronics International, Vol. 36 No. 1, pp. 8-13. https://doi.org/10.1108/MI-12-2017-0074Download as .RIS
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