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Relationship between resistance, TCR and stabilization temperature of amorphous Ni-P alloy

Wojciech Filipowski (Faculty of Automatic Control, Electronics and Computer Science, Silesian University of Technology, Gliwice, Poland)
Zbigniew Pruszowski (Institute of Electronics, Silesian University of Technology, Gliwice, Poland)
Krzysztof Waczynski (Institute of Electronics, Silesian University of Technology, Gliwice, Poland)
Piotr Kowalik (Institute of Electronics, Silesian University of Technology, Gliwice, Poland)
Jan Kulawik (Kraków Division, Institute of Electron Technology, Kraków, Poland)

Microelectronics International

ISSN: 1356-5362

Article publication date: 7 August 2017

Abstract

Purpose

The paper aims to present a research on the impact of the stabilization process of a thin metallic layer (Ni-P) produced on a ceramic surface (Al2O3) by means of electroless metallization on its electric parameters and structure. On the basis of the research conducted, the existence of a relationship between resistance (R) and the temperature coefficient of resistance (TCR) of the test structure with a Ni-P alloy-based layer and the temperature of stabilization was proposed.

Design/methodology/approach

Metallic Ni-P layers were deposited on sensitized and activated substrates. Metallization was conducted in an aqueous solution containing two primary ingredients: sodium hypophosphite and nickel chloride. The concentration of both ingredients was (50-70) g/dm3. The process lasted 60 min, and the metallization bath pH was kept at 2.1-2.2, whereas the temperature was maintained at 363 K. The thermal stabilization process was conducted in different temperatures between 453 and 623 K. After the technological processes, the resistance and TCR of the test structures were measured with a micro ohmmeter. The composition and the morphology of the resistive layer of the structures examined was also determined.

Findings

The dependence of the resistance on the temperature of the stabilization process for the temperature range 553 to 623 K was described using mathematical relationships. The TCR of test resistors at the same thermal stabilization temperature range was also described using a mathematical equation. The measurements show that the resistive layer contains 82.01 at.% of nickel (Ni) and 17.99 at.% of phosphorus (P).

Originality/value

The results associate a surface morphology Ni-P alloy with the resistance and TCR according to temperature stabilization. The paper presents mathematical relationships that have not been described in the literature available.

Keywords

Acknowledgements

This work was partially supported by the Ministry of Science and Higher Education funding for statutory activities of researchers of the Faculty of Automatic Control, Electronics and Computer Science.

Citation

Filipowski, W., Pruszowski, Z., Waczynski, K., Kowalik, P. and Kulawik, J. (2017), "Relationship between resistance, TCR and stabilization temperature of amorphous Ni-P alloy", Microelectronics International, Vol. 34 No. 3, pp. 154-159. https://doi.org/10.1108/MI-12-2016-0090

Publisher

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Emerald Publishing Limited

Copyright © 2017, Emerald Publishing Limited