The main aim of this study was a preparation development of dopant solution (DS) which can be deposited by a spray-on method and subsequently allows obtaining the n+ emitter layer with surface resistance in the range of 65-80 Ω−1. The intention of chosen spray-on method was to gain a cheaper way of dopant source deposition, compared to the commonly used methods, which is of particular importance for the new low-cost production processes.
This paper presents the sequence in producing a spray-on glass solution (DS) with very high concentration of phosphorus, which allows to perform diffusion doping at relatively low temperatures. DS contained deionized water, ethyl alcohol, tetraethoxysilane and othophosphoric acid.
The sequence in producing a DS was performed with respect to enabling the application to silicon wafers by spray-on method. Furthermore, the equations defined density and viscosity of DS in term of storage time were referred to determine the possibility of applying this solution by spray-on method. Besides, the dependence of the emitter surface resistance on the doping (diffusion) time was determined. Accordingly, optimal process conditions were specified.
The paper presents a new, so far unpublished composition of DS with very high concentration of phosphorus, which can be applied using a spray-on method. Moreover, original are also investigations respecting some properties of obtained DS relative to storage time.
This work was partially supported by the Ministry of Science and Higher Education funding for statutory activities of researchers of Faculty of Automatic Control, Electronics and Computer Science and by the project “Isothermal and refrigeration photovoltaic car body”. The project is co-financed by The National Centre for Research and Development and The National Fund for Environmental Protection and Water Management, under the program GEKON (Generator of Ecological Concepts).
Filipowski, W., Wrobel, E., Drabczyk, K., Waczynski, K., Kulesza-Matlak, G. and Lipinski, M. (2017), "Spray-on glass solution for fabrication silicon solar cell emitter layer", Microelectronics International, Vol. 34 No. 3, pp. 149-153. https://doi.org/10.1108/MI-12-2016-0089
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