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Modelling dynamic characteristics of the IGBT with thermal phenomena taken into account

Krzysztof Górecki (Department of Marine Electronics, Gdynia Maritime University, Gdynia, Poland)
Paweł Górecki (Department of Marine Electronics, Gdynia Maritime University, Gdynia, Poland)

Microelectronics International

ISSN: 1356-5362

Article publication date: 7 August 2017

Abstract

Purpose

This paper aims to propose the electrothermal dynamic model of the insulated gate bipolar transistors (IGBT) for SPICE.

Design/methodology/approach

The electrothermal model of this device (IGBT), which takes into account both electrical and thermal phenomena, is described. Particularly, the sub-threshold operation of this device is considered and electrical, and thermal inertia of this device is taken into account. Attention was focused on the influence of electrical and thermal inertia on waveforms of terminal voltages of the considered transistor operating in the switching circuit and on waveforms of the internal temperature of this device.

Findings

The correctness of the presented model is verified experimentally and a good agreement of the calculated and measured electrical and thermal characteristics of the considered device is obtained.

Research limitations/implications

The presented model can be used for different types of IGBT, but it is dedicated for SPICE software only.

Originality/value

The form of the worked out model is presented and the results of experimental verification of this model are shown.

Keywords

Citation

Górecki, K. and Górecki, P. (2017), "Modelling dynamic characteristics of the IGBT with thermal phenomena taken into account", Microelectronics International, Vol. 34 No. 3, pp. 160-164. https://doi.org/10.1108/MI-11-2016-0082

Publisher

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Emerald Publishing Limited

Copyright © 2017, Emerald Publishing Limited