The design and performance of X-band high power 3-bit phase shifter which has been fabricated in 0.25µm GaN HEMT technology are presented.
Each bit of this phase shifter design is based on high-pass/low-pass topology.
For all eight states, the insertion loss is 12.5 ± 2.5 dB from 8-10 GHz and the input return loss is better than 9 dB over 8-10 GHz. The 3-bit phase shifter achieves a RMS phase error of 1o at 8.5 GHz and a RMS amplitude error less than 1.1dB. The measured continuous wave power data demonstrates typical input RF power handing capability of 32 dBm at 8 GHz.
This is to the authors’ knowledge the first published results of 3-bit AlGaN/GaN phase shifter.
Sun, P., Liu, H., Geng, M., Zhang, R., Yuan, T. and Luo, W. (2018), "High power 3-bit GaN high-pass/low-pass phase shifter for X-band applications", Microelectronics International, Vol. 35 No. 2, pp. 92-96. https://doi.org/10.1108/MI-11-2016-0077Download as .RIS
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