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Model of boron diffusion in silicon used for solar cell fabrication based on boric acid solutions

Wojciech Filipowski (Faculty of Automatic Control, Electronics and Computer Science, Silesian University of Technology, Gliwice, Poland)

Microelectronics International

ISSN: 1356-5362

Article publication date: 24 October 2022

16

Abstract

Purpose

The purpose of this paper is to develop a model that allows determining the boron concentration profile in silicon based on duration and temperature of the diffusion process.

Design/methodology/approach

The model was developed on the basis of the Fick’s second law, which is fundamental for describing the diffusion process. The explicit scheme of the finite difference method was used in the conducted simulations. Results of measurements made using the secondary ion mass spectrometry (SIMS) were used as template dopant concentration profiles. Solution of boric acid in ethanol is the dopant source for which this model was developed.

Findings

Based on the conducted simulations, it was proposed that besides the influence of electric field of ionized dopants, which is already described in literature, an appropriate factor reflecting the influence of the threshold concentration on the coefficient of diffusion of boron in silicone should also be introduced.

Originality/value

The developed model enables determination of the boron concentration profile in silicon consistent with the results of SIMS measurements. A factor taking into account the influence of threshold concentration on the coefficient of diffusion was introduced. The influence of concentration of boric acid in the dopant solution on the concentration profile was also considered.

Keywords

Acknowledgements

This work was partially supported by funding for statutory activities of researchers of the Faculty of Automatic Control, Electronics and Computer Science.

Citation

Filipowski, W. (2022), "Model of boron diffusion in silicon used for solar cell fabrication based on boric acid solutions", Microelectronics International, Vol. ahead-of-print No. ahead-of-print. https://doi.org/10.1108/MI-07-2021-0065

Publisher

:

Emerald Publishing Limited

Copyright © 2022, Emerald Publishing Limited

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