The design, fabrication and experimental validation of defected microstrip structure (DMS) are proposed to address the problem of near-end crosstalk (NEXT) and far-end crosstalk (FEXT) between the microstrip transmission lines in a printed circuit board.
The proposed DMS evolved with the combination of spur line (L-shaped DMS) and U-shaped DMS topologies. This technique reduces the strength of electromagnetic coupling and suppresses crosstalk by optimizing the capacitive and inductive coupling ratio between the linked microstrip lines. The practical inductance value is much more significant in DMS than in defected ground structures (DGS), but the capacitance value remains the same.
A DMS unit is etched on the aggressor microstrip line instead of the DGS circuit. Because there is no leakage via the ground plane and the circuit size is far smaller than with DGS, the enclosure issue is disregarded. DMS structures have a larger effective inductance and are resistant to electromagnetic interference. A tightly coupled transmission line structure with minimal separation between the coupled microstrip line is designed using DMS. Further research must be conducted to improve the NEXT, FEXT and spacing between the transmission lines.
Simulation and actual measurement results show that the proposed DMS structure can effectively suppress crosstalk by analysing the S-parameters, namely, S_12, S_13 and S_14, with measured values of 1.48 dB, 20.65 dB and 21.099 dB, respectively. The data rate is measured to be 1.34 Gbps as per the eye diagram characterization. The results show that the NEXT and FEXT are reduced by approximately 20 dB in the frequency range of 1–11 GHz for mixed signals. The substantial measured results in the vector network analyser coincide with the computer simulation technology microwave studio suite simulation results.
V., Y., Alsath, G.N. and Kanagasabai, M. (2022), "Defected microstrip structure-based near-end and far-end crosstalk mitigation in high-speed PCBs for mixed signals", Microelectronics International, Vol. ahead-of-print No. ahead-of-print. https://doi.org/10.1108/MI-05-2022-0089
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