This paper aims to present the possibility of the technology of chemical metallization for the production of contact of photovoltaic cells. The developed technology allows you to perform low-cost contacts in any form.
The study used a multi- and monocrystalline silicon plates. On the surface of the plates, the contact by the electroless metallization was made. After metallization stage, annealing process in a temperature range of 100-700°C was conducted to obtain ohmic contact in a semiconductor material. Subsequently, the electrical parameters of obtained structures were measured. Therefore, trial soldering was made, which demonstrated that the layer is fully soldered.
Optimal parameters of the metallization bath was specified. The equations RS = f (metallization time), RS = f (temperature of annealing) and C-V characteristics were determined. As a result of conducted research, it has been stated that the most appropriate way leading to the production of soldered metal layers with good adhesion to the portion of selectively activated silicon plate is technology presented below in the following steps: masking, selective activation and nickel-plating of activated plate. Such obtained metal layers have great variety in application and, in particular, can be used for the preparation of electric terminals in silicon solar cell.
The paper presents a new, unpublished method of manufacturing contacts in the structure of the photovoltaic cell.
This work was funded from research project BK216/RAu-3/2013 in Institute of Electronics, Silesian University of Technology.
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