Computer‐aided selective production of low-resistance NiP and NiCuP layers

Abstract

Purpose

This paper aims to present the possibility of computer-aided technology of chemical metallization for the production of electrodes and resistors based on Ni-P and Ni-Cu-P layers.

Design/methodology/approach

Based on the calculated parameters of the process, test structures were made on an alumina substrate using the selective metallization method. Dependences of the surface resistance on the metallization time were made. These dependencies take into account the comparison of the calculations with the performed experiment.

Findings

The author created a convenient and easy-to-use tool for calculating basic Ni-P and Ni-Cu-P layer parameters, namely, surface resistance and temperature coefficient of resistance (TCR) of test resistor, based on chemical metallization parameters. The values are calculated for a given level of surface resistance of Ni-P and Ni-Cu-P layer and defined required range of changes of TCR of test resistor. The calculations are possible for surface resistance values in the range of 0.4 Ohm/square ÷ 2.5 Ohm/square. As a result of the experiment, surface resistances were obtained that practically coincide with the calculations made with the use of the program created by the authors. The quality of the structures made is very good.

Originality/value

To the best of the authors’ knowledge, the paper presents a new, unpublished method of manufacturing electrodes (resistors) on silicon, Al₂O₃ and low temperature co-fired ceramic substrates based on the authors developed computer program.

Citation

Kowalik, P. and Wróbel, E. (2021), "Computer‐aided selective production of low-resistance NiP and NiCuP layers", Microelectronics International, Vol. 38 No. 4, pp. 157-161. https://doi.org/10.1108/MI-04-2021-0032