The influence of emitter resistance on the electrical parameters of mono- and multicrystalline silicon solar cells

Abstract

Purpose

The purpose of this study was the comparison and analysis of the electrical parameters of two kinds of silicon solar cells (mono- and multicrystalline) of different emitter resistance.

Design/methodology/approach

By controlling of diffusion parameters, silicon mono- (Cz-Si) and multicrystalline (mc-Si) solar cells with different emitter resistance values were produced – 22 and 48 Ω/□. On the basis of current-voltage measurements of cells and contact resistance mapping, the properties of final solar cells based on two different materials were compared. Additionally, the influence of temperature on PV cells efficiency and open circuit voltage (U_oc) were investigated. The PC1D simulation was useful to determine spectral dependence of external quantum efficiency of solar cells with different emitter resistance. The silicon solar cells of 25 cm² area and 240 µm thickness were investigated.

Findings

Considering the all stages of cell technology, the best structure is silicon solar cell with sheet resistance (R_sheet) of 45-48 Ω/□. Producing of an emitter with this resistance allowed to obtain cells with a fill factor between 0.725 and 0.758, U_oc between 585 and 612 mV, short circuit current (I_sc) between 724 and 820 mA.

Originality/value

Measurements and analysis confirmed that mono- and multicrystalline silicon solar cells with 48 Ω/□ emitter resistance have better parameters than cells with R_sheet of 22 Ω/□. The contact resistance is the highest for mc-Si with R_sheet of 48 Ω/□ and reaches the value 3.8 Ωcm.

Citation

Swatowska, B., Panek, P., Michoń, D. and Drygała, A. (2019), "The influence of emitter resistance on the electrical parameters of mono- and multicrystalline silicon solar cells", Microelectronics International, Vol. 36 No. 3, pp. 90-94. https://doi.org/10.1108/MI-04-2019-0019