Aluminum nitride (AlN) ceramics are suitable substrate and package materials for high-power integrated circuits.
Dense AlN ceramics with Y2O3 and LaF3 as sintering additives are prepared. The effects of these additives on the density, phase composition, microstructure and thermal conductivity of AlN ceramics are investigated.
Results show that 2 Wt.% Y2O3-doped additive is insufficient for the samples to achieve the full densification sintered at 1,700°C. When LaF3 is added with Y2O3, the samples are perfectly densified at the same sintering condition. The relative density and thermal conductivity of the samples are 97.8-99.07 per cent and 169.104-200.010 W·m-1·K-1, respectively. The density of the samples and their microstructure, especially the content and distribution of secondary phases, is necessary to control the thermal conductivity of AlN ceramics.
Y2O3 and LaF3 additives can effectively promote densification and enhance the thermal conductivity of AlN ceramics in a low sintering temperature, and the AlN ceramics added with Y2O3-LaF3 might have potential applications in package materials for high-power integrated circuits.
This work was supported by the National Science and Technology Major Project (sub-project) [Grant no. 2013ZX02104-001-002]. The authors are grateful to Analytical and Testing Center, Huazhong University of Science and Technology for XRD and SEM analysis.
Jiang, H., Lu, Y., Ding, L., Lu, W., Fan, G. and Shi, Y. (2019), "Effects of Y2O3-LaF3 on the low temperature sintering and thermal conductivity of AlN ceramics", Microelectronics International, Vol. 36 No. 1, pp. 22-25. https://doi.org/10.1108/MI-03-2018-0016Download as .RIS
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