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Effects of Y2O3-LaF3 on the low temperature sintering and thermal conductivity of AlN ceramics

Hai Jiang (School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China)
YiYing Lu (School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China)
Liwen Ding (School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China)
Wenzhong Lu (School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China)
Guifen Fan (School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China)
Yusheng Shi (School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China)

Microelectronics International

ISSN: 1356-5362

Publication date: 7 January 2019

Abstract

Purpose

Aluminum nitride (AlN) ceramics are suitable substrate and package materials for high-power integrated circuits.

Design/methodology/approach

Dense AlN ceramics with Y2O3 and LaF3 as sintering additives are prepared. The effects of these additives on the density, phase composition, microstructure and thermal conductivity of AlN ceramics are investigated.

Findings

Results show that 2 Wt.% Y2O3-doped additive is insufficient for the samples to achieve the full densification sintered at 1,700°C. When LaF3 is added with Y2O3, the samples are perfectly densified at the same sintering condition. The relative density and thermal conductivity of the samples are 97.8-99.07 per cent and 169.104-200.010 W·m-1·K-1, respectively. The density of the samples and their microstructure, especially the content and distribution of secondary phases, is necessary to control the thermal conductivity of AlN ceramics.

Originality/value

Y2O3 and LaF3 additives can effectively promote densification and enhance the thermal conductivity of AlN ceramics in a low sintering temperature, and the AlN ceramics added with Y2O3-LaF3 might have potential applications in package materials for high-power integrated circuits.

Keywords

Acknowledgements

This work was supported by the National Science and Technology Major Project (sub-project) [Grant no. 2013ZX02104-001-002]. The authors are grateful to Analytical and Testing Center, Huazhong University of Science and Technology for XRD and SEM analysis.

Citation

Jiang, H., Lu, Y., Ding, L., Lu, W., Fan, G. and Shi, Y. (2019), "Effects of Y2O3-LaF3 on the low temperature sintering and thermal conductivity of AlN ceramics", Microelectronics International, Vol. 36 No. 1, pp. 22-25. https://doi.org/10.1108/MI-03-2018-0016

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Publisher

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Emerald Publishing Limited

Copyright © 2019, Emerald Publishing Limited

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