The LTCC device for miniature plasma generators characterization
Article publication date: 1 August 2016
The purpose of this paper is a presentation of a miniature vertical dielectric barrier discharge (DBD) plasma generators. The presented devices, with sub- and superstrate, were made using low temperature co-fired ceramics (LTCC). Such construction allowed to measure discharge spectra and device temperature easily.
The generators were made in the Du Pont 951 system with silver vertical metallizations and PdAg contacts. The devices had electrodes with different width and height. Also, the distance between them could be established. They were placed on substrate with buried temperature sensor and covered with a ceramic lid. The lid had opening to measure emitted light. Different configurations of vertical DBD were tested.
Geometry of vertical metallizations influences on spectra, as well as distance between them. Signal-to-noise ratio had a maximum for certain generators and can be measured by the intensity of highest peak.
Height of vertical metallizations is limited by the difference in shrinkage of LTCC tape and via paste. Parameters of temperature sensors vary between measurements, according to rapid changes of temperature and presence of strong electric field.
The generators can be used for creating discharge for optical emission spectrometry. It is a convenient method to determine the amount of selected gas compounds.
This paper shows fabrication and performance of the novel vertical DBD generators with ceramic additions for convenient spectra measurement and monitoring temperature of the device during work.
This work was supported by statutory activity of Wrocław University of Science and Technology and project “Interuniversity Didactic-Technological Center ‘TECHNOPOLIS’ in Wroclaw” No. UDA-POIS.13.01-021/09-00. Also, National Science Centre (DEC-2013/09/D/ST7/03953) is acknowledged for the financial support.
Macioszczyk, J., Malecha, K. and Golonka, L.J. (2016), "The LTCC device for miniature plasma generators characterization", Microelectronics International, Vol. 33 No. 3, pp. 149-154. https://doi.org/10.1108/MI-03-2016-0021
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