Electrical parameters of solar cells with electrodes made by selective metallization
Abstract
Purpose
This paper aims to present the results of measurements of the photovoltaic structures made by electroless selective metallization technology. The developed technology provides low-cost contacts in any form, and parameters of photovoltaic cells made in this technology provide reliable results, comparable with those usually used.
Design/methodology/approach
In this paper, photovoltaic cells with contacts based on Nip and NiCuP alloy were performed. As a substrate, mono- and multicristaline silicon was used. After photovoltaic cells have been prepared, sheet resistance of the contact layers and electrical parameters were measured. Composition and structure of contact layers were also measured.
Findings
Obtained results of sheet resistance and contact layers are repeatable and comparable with previously published results. Electrical parameters of the photovoltaic cells made are comparable with used substrate and technologies. The authors have also noticed that the costs of the electroless metallization which is used to make contact layers is lower than metallization made by thick film or vacuum deposition technologies.
Originality/value
The paper presents new, unpublished results of electrical parameters of photovoltaic cells with contact layers made by electroless metallization. The original idea is the usage of metallization in an acidic solution (pH = 2). In this proposed technology, photovoltaic cells on mono- and multicrystalline silicon plates were performed.
Keywords
Acknowledgements
Work funded from research project BK in Institute of Electronics, Silesian University of Technology.
Citation
Kowalik, P., Wrobel, E. and Mazurkiewicz, J. (2016), "Electrical parameters of solar cells with electrodes made by selective metallization", Microelectronics International, Vol. 33 No. 1, pp. 36-41. https://doi.org/10.1108/MI-03-2015-0028
Publisher
:Emerald Group Publishing Limited
Copyright © 2016, Emerald Group Publishing Limited