Effect of nucleation layer thickness on reducing dislocation density in AlN layer for AlGaN-based UVC LED
Microelectronics International
ISSN: 1356-5362
Article publication date: 8 July 2021
Issue publication date: 2 September 2021
Abstract
Purpose
The purpose of this study is to investigate the influence of AlN nucleation thickness in reducing the threading dislocations density in AlN layer grown on sapphire substrate.
Design/methodology/approach
In this work, the effect of the nucleation thickness at 5 nm, 10 nm and 20 nm on reducing the dislocation density in the overgrown AlN layer by metal organic chemical vapor deposition was discussed. The AlN layer without the nucleation layer was also included in this study for comparison.
Findings
By inserting the 10 nm thick nucleation layer, the density of the dislocation in the AlN layer can be as low as 9.0 × 108 cm−2. The surface of the AlN layer with that nucleation layer was smoother than its counterparts.
Originality/value
This manuscript discussed the influence of nucleation thickness and its possible mechanism in reducing dislocations density in the AlN layer on sapphire. The authors believe that the finding will be of interest to the readers of this journal, in particular those who are working on the area of AlN.
Keywords
Acknowledgements
The authors would like to thank Collaborative Research in Engineering, Science and Technology Center (CREST) for their continuous support in this research and AkzoNobel for partially sponsoring the metal organic sources.
This research has been funded by Kementerian Pendidikan Malaysia (203/CINOR/6711718) Fundamental Research Grant Scheme (FRGS).
Citation
Samsudin, M.E.A., Yusuf, Y., Zainal, N., Abu Bakar, A.S., Zollner, C., Iza, M. and DenBaars, S.P. (2021), "Effect of nucleation layer thickness on reducing dislocation density in AlN layer for AlGaN-based UVC LED", Microelectronics International, Vol. 38 No. 3, pp. 113-118. https://doi.org/10.1108/MI-02-2021-0012
Publisher
:Emerald Publishing Limited
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