The purpose of this paper is to investigate the nanoscale electric performance of NiO thin films in grain boundary and grain face.
PeakForce tunnel atomic force is applied to visualize the nanoscale current imaging of the NiO thin film on fluorine tin oxide substrate.
The results show that the grain boundary has a significant impact on the nanoscale current of the NiO film. The electronic conductivity and in grain boundary is higher than that of the NiO film in grain face. The width of the conductive zone in the NiO film over grain boundaries is ∼ 60 nm. The tunnel current between the tip and the NiO film is consistent with the Fowler–Nordheim tunnel model.
The higher tunnel current in grain boundary is probably attributed to the enhanced energy band bending and adhesion force.
This work was financially supported by the scientific and technological project of Henan province, the National Natural Science Foundation of China and the Program for Innovative Research Team (in Science and Technology) inHenan University.
Zhang, Y. (2019), "Observation of the enhanced tunnel current of NiO thin films in grain boundary by peakforce TUNA", Microelectronics International, Vol. 36 No. 4, pp. 160-164. https://doi.org/10.1108/MI-02-2019-0008Download as .RIS
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