Synthesis and characterization of ZnO based varistor ceramics: effect of sintering temperatures

Abstract

Purpose

The purpose of this paper is to investigate the effects of the sintering temperature on the microstructural, morphological and electrical characteristics of Zinc oxide (ZnO)-based varistors.

Design/methodology/approach

This study used a conventional method to design and produce ZnO varistors by sintering ZnO powder with small amounts of various metal oxides. Furthermore, the effect of sintering temperature on varistor properties of (Bi, Co, Cr, Sb, Mn)-doped ZnO ceramics was investigated in the range of 1280–1350 °C.

Findings

The obtained results showed an E_B value of 2109.79 V/cm, a V_gb value of 0.831 V and a nonlinear coefficient (α) value of 19.91 for sample sintered at temperature of 1300 °C. In addition, the low value of tan δ at low frequency range confirmed that the grain boundaries created in 1300 °C sintering temperature were obviously good.

Originality/value

Based on the previous research on the ZnO-based varistors, a thorough study was carried out on these components to improve their electrical characteristics. Thus, it is necessary that those varistors have low leakage current and low value of dissipation factor to ensure their good quality. High breakdown fields and nonlinearity coefficients are also required in such kind of components. The effect of sintering temperature on the varistor properties of the new compositions (zinc, bismuth, manganese, chrome, cobalt, antimony and silicon oxides)-doped ZnO ceramics was studied in the range of 1280–1350 °C. Also, the microstructure and the phase evolution of the samples sintered at various temperatures (1280 °C, 1300 °C, 1320 °C and 1350 °C) were investigated according to X-ray diffraction and scanning electron microscope measurements.

Citation

Bouchekhlal, A. and Boulesbaa, M. (2022), "Synthesis and characterization of ZnO based varistor ceramics: effect of sintering temperatures", Microelectronics International, Vol. 39 No. 3, pp. 110-120. https://doi.org/10.1108/MI-01-2022-0005