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Study on high temperature model based on the n-Channel planar 4H-SiC MOSFET

Zhenyu Tang (School of Microelectronics, Xidian University, Xian, China)
Xiaoyan Tang (School of Microelectronics, Xidian University, Xian, China)
Shi Pu (Xi'An Xiangteng Microelectronics Technology CO. LTD, Xian, China)
Yimeng Zhang (School of Microelectronics, Xidian University, Xian, China)
Hang Zhang (School of Microelectronics, Xidian University, Xian, China)
Yuming Zhang (School of Microelectronics, Xidian University, Xian, China)
Song Bo (State Key Laboraroty of Wide-bandgap Semiconductor Power Electronics Devices, Nanjing, China)

Circuit World

ISSN: 0305-6120

Article publication date: 10 June 2021

Issue publication date: 24 November 2022

178

Abstract

Purpose

To use the 4H-SiC material in integrated circuits for high temperature application, an accurate and simple circuit model of n-channel planar 4H-SiC MOSFET is required.

Design/methodology/approach

In this paper, a SPICE model of n-channel planar 4H-SiC MOSFET was built based on the device simulation results and measurement results. Firstly, a device model was simulated with Sentaurus TCAD, with measured parameters from fabricated planar 4H-SiC MOSFET previously. Then the device simulation results were analyzed and parameters for SPICE models were extracted. With these parameters, an accurate SPICE model was built and simulated.

Findings

The SPICE model exhibits the same performance as the measured results with different environment temperatures. The simulation results indicate that the maximum fitting error is 0.22 mA (7.33% approximately) at 200 °C. A common-source amplifier with this model is also simulated and the simulated gain is stable at different environment temperatures.

Originality/value

This paper provides a reliable modeling method for n-Channel Planar 4H-SiC MOSFET and reference value for the design of 4H-SiC high temperature integrated circuit.

Keywords

Acknowledgements

This work is supported by the State Key Laboraroty of Wide-bandgap Semiconductor Power Electronics Devices (2019KF003), Key Research and Development Program of Shaanxi (Grant 2018ZDL-GY01-03, 2019GY-004), and Aeronautical Science Foundation of China (201743X2001, 20174381).

Citation

Tang, Z., Tang, X., Pu, S., Zhang, Y., Zhang, H., Zhang, Y. and Bo, S. (2022), "Study on high temperature model based on the n-Channel planar 4H-SiC MOSFET", Circuit World, Vol. 48 No. 4, pp. 401-411. https://doi.org/10.1108/CW-12-2020-0351

Publisher

:

Emerald Publishing Limited

Copyright © 2021, Emerald Publishing Limited

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